| Title | Method for transferring graphene layer |
| Year | 2015 |
| Country | TW、US |
| Inventor | CHEN, CHIA CHUN |
| Co-inventor | CHEN, CHUN WEI ; WANG, DI YAN; HUANG, I SHENG |
| Cert. No. | I485290、US8,926,852B2 |
| Introduction | The present invention discloses a method for transferring a graphene layer. The graphene layer formed on a metal carrier layer is electrostatically adsorbed on a substrate by electrostatic charges, and then the substrate having the graphene layer formed on the metal carrier layer is immersed in an etching solution to remove the metal carrier layer, thereby completing the transfer of the graphene layer. In addition to being able to provide a simple method for transferring the graphene layer, the present invention further solves a problem of retaining organic residues, thus enhancing electrical properties of the transferred graphene layer. |
| Validity | 2033/02/27 |
| Domain | Chemistry |
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