| Title | STRAINED-GATE ENGINEERED DYNAMIC RANDOM ACCESS MEMORY INCLUDING FERROELECTRIC NEGATIVE CAPACITANCE DIELECTRICS AND MANUFACTURING METHOD THEREOF |
| Year | 2018 |
| Country | TW |
| Inventor | ZHENG, CHUN-HU |
| Co-inventor | CHANG, CHUN YEN; CHIU, YU CHIEN |
| Cert. No. | I611515 |
| Introduction | 本發明揭露一種動態隨機記憶體及其製造方法。動態隨機記憶體之儲存元包含鰭狀式電晶體及電容。鰭狀式電晶體之閘極由具有應力之應變效果的氮化或碳化金屬構成。鰭狀式電晶體之閘極介電質及/或電容之介電質由具有負電容特性之鐵電材料構成。透過應變閘極工程之應用，本發明可達到下列功效：(1)增強介電質之鐵電特性，藉以提升鰭狀式電晶體之操作速度及耐久性；(2)增強鐵電負電容效應，藉以改善鰭狀式電晶體之次臨界擺幅，致使鰭狀式電晶體之切換耗能及關閉狀態漏電流降低，以有效提升電容的電荷保存能力並改善動態隨機記憶體之操作特性。 |
| Validity | 2036/11/14 |
| Domain | Electronic_Engineering |
View count:
112