| Title | MULTI-GATE HIGH ELECTRON MOBILITY TRANSISTOR WITH ALIGNED INTERNAL GATE AND NEGATIVE CAPACITANCE FERROELECTRIC DIELECTRICS AND MANUFACTURING METHOD THEREOF |
| Year | 2017 |
| Country | TW |
| Inventor | ZHENG, CHUN-HU |
| Co-inventor | CHANG, CHUN YEN; CHIU, YU CHIEN; LIN, I FENG; LIU, CHIEN |
| Cert. No. | I608607 |
| Introduction | 本發明揭露一種多閘極高電子遷移率場效電晶體及其製造方法。多閘極高電子遷移率場效電晶體包含基材、通道層、阻障層、複數個閘極、複數個對準式背向閘極及負電容鐵電介電質。通道層設置於基材上方。阻障層設置於通道層上方。複數個閘極分別設置於阻障層上方並往下延伸至阻障層內。複數個對準式背向閘極分別相對於該複數個閘極而設置於基材下方並往通道層延伸。負電容鐵電介電質分別設置於複數個閘極與阻障層之間以及複數個對準式背向閘極與基材之間。 |
| Validity | 2037/06/22 |
| Domain | Electronic_Engineering |
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