| Title | Storage memory device |
| Year | 2020 |
| Country | TW、US |
| Inventor | ZHENG, CHUN-HU |
| Cert. No. | I683420、US10,872,966B1 |
| Introduction | A storage memory device includes a vertical field effect transistor including a semiconductor substrate; a pillar extending upwardly from the substrate and containing a source, a drain, and a channel disposed therebetween; a first insulating layer surrounding the channel; a stacked structure surrounding the first insulating layer; and a gate unit. The stacked structure includes a charge trapping layer and a composite element. The composite element includes a ferroelectric layer made of a doped hafnium oxide-based material that has a predominantly orthorhombic phase and exhibits a negative capacitance; and an antiferroelectric layer made of a zirconium oxide-based material that has a predominantly tetragonal phase. |
| Validity | 2039/11/07 |
| Domain | Mechanical_Engineering |
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